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HIGH-K SOLUTION full report
Post: #1

.ppt  HIGH-K SOLUTION.ppt (Size: 561 KB / Downloads: 145)



A prediction made by Mr. Gordon Moore
that the number of transistors on a chip double every two years.


Transistor physical gate length reached 1.2nm in 90nm logic technology.
At this point the dielectric has became
so thin,we are literally running out of atoms for further scaling


Thicker class of material known as High-K is likely to replace Silicon oxide.
K stands for dielectric constant, a measure of how much charge a material can hold.


Aluminium oxide
Titanium dioxide
Tantalum pentoxide
Hafnium dioxide
Hafnium silicate
Zirconium oxide
Zirconium silicate

Problem Associated with Dielectric Layer Formation
Trapped Charge Problem -as a result there will be shift in threshold voltage each time the transistor is turned on.


Problems arise due to interaction with the Poly-Si gate
Low carrier mobility “electrons slow down

Metal Gate

Using a Metal Gate instead of Polysilicon.
The key property- Work Function of metal.
Tungsten and Molybdenum

Fabrication Methods
Gate First

-Gate dielectrics and gate electrodes are constructed first.
-Source and Drain are constructed next.
-Gate Electrode should withstand the high temperature.
Gate Last
-Gate is constructed after the source and drain are formed.
-Research is going on to find the material with right work function that could survive high temperature and enable the industry standard gate first process flow.


With the High K/Metal Gate Transistor it is possible to develop 45 nm technology node.
This will drive Moore's Law into next decade.
Post: #2
this is my work on high k solution used in micro processors which is the next generation technology

Attached File(s)
.ppt  HIGH-K SOLUTION.ppt (Size: 563 KB / Downloads: 27)
Post: #3
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Post: #5
The term high-κ dielectric refers to a material with a high dielectric constant κ (as compared to silicon dioxide). High-κ dielectrics are used in semiconductor manufacturing processes where they are usually used to replace a silicon dioxide gate dielectric or another dielectric layer of a device. The implementation of high-κ gate dielectrics is one of several strategies developed to allow further miniaturization of microelectronic components, colloquially referred to as extending Moore's Law.

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